use of computer modeling for defect engineering in czochralski silicon

A Selective Review of the Quantification of Defect

2005/7/13Trends in semiconductor defect engineering at the nanoscale. Materials Science and Engineering: R: Reports 2010, 70 (3-6), Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals. Journal of Crystal Growth 2007, 303

OSA

Several kinds of nonlinear optical effects have been observed in recent years using silicon waveguides, and their device applications are attracting considerable attention. In this review, we provide a unified theoretical platform that not only can be used for understanding the underlying physics but should also provide guidance toward new and useful applications. We begin with a description

Oxygen Precipitation in Silicon

2016/3/19Richter, H.: Gettering in the silicon device technology - an overview. In: Proceedings 1st International Autumn School Gettering and Defect Engineering in the Semiconductor Technology (GADEST), 8–18 Oct 1985, GDR, Garzau, p. 1 (1985) Google Scholar

[PDF] Defect Engineering During Czochralski Crystal

Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing inproceedings{Valek2012DefectED, title={Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing}, author={L. Valek and J. {vS}ik}, year,

[PDF] Defect Engineering During Czochralski Crystal

Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing inproceedings{Valek2012DefectED, title={Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing}, author={L. Valek and J. {vS}ik}, year,

TestMAX Diagnosis for Fast and Accurate Silicon Defect

TestMAX Diagnosis analyzes defective silicon results to determine the corresponding defect locations. It delivers unparalleled runtime, ensuring high accuracy of silicon defect candidates for failure analysis. TestMAX Diagnosis complements TestMAX ATPG and

Algorithm for Calculating the Initial Defect Structure of

2017/11/28An algorithm for calculating the defect structure of semiconductor silicon crystals was proposed. The proposed approach makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal. Calculations are performed by

Oxygen Precipitation in Silicon

2016/3/19Richter, H.: Gettering in the silicon device technology - an overview. In: Proceedings 1st International Autumn School Gettering and Defect Engineering in the Semiconductor Technology (GADEST), 8–18 Oct 1985, GDR, Garzau, p. 1 (1985) Google Scholar

PARAMETER ESTIMATION AND MODELING OF

2006/7/20The use of hydrogenated amorphous silicon material(a-Si:H) in devices such as solar cells, active thin film transistor liquid crystal display panels, various sensors, etc. requires an accurate model of the material characteristics and their dependence on light intensity and light soaking over a broad temperature range. Through the use of nonlinear parameter estimation techniques, a gap state

IEEE JOURNAL OF SOLID

IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 43, NO. 7, JULY 2008 1563 An Assessment of -Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration Nitz Saputra, Student Member, IEEE, Mina Danesh, Member, IEEE, Alessandro Baiano, Ryoichi Ishihara,

(およびからの)|

Silicon Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface I.Y. Evstratov, et al Microelectronic Engineering, 56/1-2 (2001) pp. 139-142 Silicon Modeling analysis of unsteady three-dimensional

Use of computer modeling for defect engineering in Czochralski

Use of computer modeling for defect engineering in Czochralski silicon growth V. Artemyeva, b, A. Smirnov a,b, Keywords: Czochralski silicon growth, structure loss, dislocation density 1. Introduction There is a drive to increase silicon crystal yield to meet

Vitalyi Igorevich Talanin

2021/4/21V. I. Talanin. The modeling and properties of dislocation-free silicon single crystals defect structure. (HU "ZISMG", 2007, Zaporozhye) 275 p. (On Russian). V. I. Talanin, I. E. Talanin. Modelling of the defect structure in dislocation-free silicon single crystals

Applications Simulation and Fabrication of Heterojunction Silicon Solar Cells from Numerical Computer

crystalline silicon solar cells. Amongst the various programs in use, Pc1D is more or less astandard in the field. Physical device modeling in thin-film photo-voltaic is less developed than for a crystalline silicon solar cell, owing to the more complicated physics

Transport of Point Defects in Growing Si Crystals

We present a detailed defect model for silicon crystals which incorporates all relevant phenomena. Conservation equations for self-interstitials and vacancies are introduced and a finite element method is provided for predicting the concentration of point defects in growing Czochralski silicon crystals.

Vitalyi Igorevich Talanin

2021/4/21V. I. Talanin. The modeling and properties of dislocation-free silicon single crystals defect structure. (HU "ZISMG", 2007, Zaporozhye) 275 p. (On Russian). V. I. Talanin, I. E. Talanin. Modelling of the defect structure in dislocation-free silicon single crystals

2020 Poster Authors and Abstracts

Won, Deborah; Electrical and Computer Engineering, California State University, Los Angeles Abstract: A mobile application was designed and developed to track fitness and play games, called "exergames", in which the players are required to perform physical activity.

Silicon Devices: Structures and Processing

Silicon is the most important material for the electronics industry. In modern microelectronics silicon devices like diodes and transistors play a major role, and devices like photodetectors or solar cells gain ever more importance. This concise handbook deals with one of the most important topics for the electronics industry. World renowned authors have contributed to this unique overview of

No.83 Special Issue on Silicon Wafers

Silicon Wafer Defect Engineering Synchronizing State of the Art Semiconductor Devices (975KB) Performance Guarantee of Silicon Wafers by Their Electrical Characterization (805KB) Nitrogen Doping Grown-in Defects Engineering in Silicon Crystals and Argon-annealed Wafer (714KB)

Characterization of Defects for Effective Gettering in

2008/9/5Macodiyo, DO, Soyama, H, Hayashi, K. Characterization of Defects for Effective Gettering in Silicon Wafer and Polysilicon Thin Films. Proceedings of the ASME 8th Biennial Conference on Engineering Systems Design and Analysis.Volume 2: Automotive

Modeling Microdefect Formation in Czochralski Silicon

2019/12/6As described previously by a point defect dynamics model [J. Electrochem. Soc., 145, 303 (1998)], the oxidation‐induced stacking fault (OSF)‐ring position delineates the vacancy‐rich region inside from the external interstitial‐rich crystal. In Czochralski silicon.

Investigation of the oxygen‐related lattice defects in

V. A. Makara, X-ray Diffraction Study of the Effect of Neutron Irradiation on the Defect Formation in Silicon Crystals Grown by the Czochralski Method and Annealed at High Temperatures, Physics of the Solid State, 10.1134/1.2087738, 47, 10, (1863), (2005).

Oxygen Precipitation in Silicon

2016/3/19Richter, H.: Gettering in the silicon device technology - an overview. In: Proceedings 1st International Autumn School Gettering and Defect Engineering in the Semiconductor Technology (GADEST), 8–18 Oct 1985, GDR, Garzau, p. 1 (1985) Google Scholar

Defects in Microelectronic Materials and Devices

2019/10/7Defect Formation and Annihilation in Electronic Devices and the Role of Hydrogen. Toward Engineering Modeling of Negative Bias Temperature Instability. Wear-Out and Time-Dependent Dielectric Breakdown in Silicon Oxides. Defects Associated with Dielectric

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