influence of traveling magnetic field on the crystallization of multicrystalline silicon

Numerical analysis of thermohydraulic behavior in a

In this study, the crystallization process in a directional solidification furnace is studied by using the transient numerical simulation. The flow field in melt silicon in conjunction with different solidification stages is investigated. A separated side-heater design is proposed, showing a pronounced improvement on temperature gradient in axial direction normal to the solidification

Gettering and Defect Engineering in Semiconductor

This technique is applied to p‐type upgraded metallurgical‐grade multicrystalline silicon wafers from the edge of the silicon cast. Silicon heterojunction solar cells are fabricated with these defect‐engineered wafers, achieving an impressive open circuit of 690 mV and efficiency of 18.7%.

Curiculum Vitae Prof.dr. Daniel Vizman

melt flow in a Si-Czochralski melt under the Influence of a cusp-magnetic field. Comparison to experimental results la a 13-a Conferinţă internaţională de creştere a cristalelor, 2001, Kyoto, Japan - Premiul "Excelence in reviewing", 2014, ELSEVIER 9.Burse

Preliminary study on molten silicon velocity distribution during

for quasi-silicon crystalline silicon solar cells in the iDSS furnace, 7th Int. Conference on Electromagnetic Processing of Materials, Beijing (China). [2] K.Dadzis (2012),Modeling of directional solidification of multicrystalline silicon in a traveling magnetic field,

Electromagnetic Methods for Influencing the

Natural Convection Silicon Single Crystal Temperature Oscillation Constant Magnetic Field Crystallization Front These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Crystals

So far, the numerical methods used to simulate crystal growth mainly focus on phase field method and cellular automaton. In addition, because the Jacson factor of Si is greater than 2.0 [], the growth interface shows significant facet characteristics, so the phase field (PF) method used to calculate the growth of silicon crystal is different from the PF method of non-facet crystal represented

Numerical study of the influence of different types of

2011/3/1The applications of a rotating magnetic field or a travelling magnetic field in the solidification processes of Al–Si or Pb–Sn alloys were largely investigated in the literature,,, . It was proved that melt stirring generated by a rotating magnetic field can influence in

atom probe tomography, silicon solar cells, kesterite

Multicrystalline silicon (mc-Si) is a commonly used and highly cost-effective bulk material for solar cell applications [1]. Up to date, the record efficiency registered for mc-Si solar cells is 20.8%, while the one registered for monocrystalline Si solar cells is 25.6% [2].

The influence of travelling magnetic field on phosphorus

2019/2/1The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline silicon is investigated. • The evaporation of phosphorus from silicon melt surface is observed. • The potential of resistivity control by travelling magnetic field is proved.

Preliminary study on molten silicon velocity distribution during

for quasi-silicon crystalline silicon solar cells in the iDSS furnace, 7th Int. Conference on Electromagnetic Processing of Materials, Beijing (China). [2] K.Dadzis (2012),Modeling of directional solidification of multicrystalline silicon in a traveling magnetic field,

DE102012204313B3

It is also known that heat and a magnetic traveling or rotating field can be generated simultaneously in a heater [P. Rudolph, J. Crystal Growth 310 (2008) 1298]. For the construction of so-called heater magnet modules (HMM), which serve to generate the magnetic fields and at the same time for heating, in particular DE 10349339 A1 .

Semiconductor Crystal Growth under the Influence of

An overview on magnetic field features with the focus on achievable results under the influence of traveling magnetic fields is given. 1 Introduction Today, the demand of industrial semiconductor crystal growth is directed at enhancing the yield and simultaneous improving the crystal quality.

Crystals

So far, the numerical methods used to simulate crystal growth mainly focus on phase field method and cellular automaton. In addition, because the Jacson factor of Si is greater than 2.0 [], the growth interface shows significant facet characteristics, so the phase field (PF) method used to calculate the growth of silicon crystal is different from the PF method of non-facet crystal represented

Crystals

At present, we have not many investigations that deal with the role of temperature for protein crystallization [17,18,19,20,21], though we still find a few.Budayova-Spano et al., have developed new strategies and devices to grow big crystals for neutron diffraction [], and for protein crystallization using buttons of dialysis [23,24].

‪Zaoyang Li‬

Global simulations of heat transfer in directional solidification of multi-crystalline silicon ingots under a traveling magnetic field Q Yu, L Liu, Z Li, P Su Journal of crystal growth 401, 285-290, 2014 13 2014 Numerical study of melt flow under the influence of heater

Effect of alternating magnetic field on the removal of metal

2016/3/1Multicrystalline silicon ingots without and with alternating magnetic field during directional solidification process under industrial system were obtained from metallurgical grade silicon (MG-Si). The concentrations and normalized concentrations of metal impurities in the two silicon

Numerical study of the influence of different types of

2011/3/1The applications of a rotating magnetic field or a travelling magnetic field in the solidification processes of Al–Si or Pb–Sn alloys were largely investigated in the literature,,, . It was proved that melt stirring generated by a rotating magnetic field can influence in

Three

DOI: 10.5176/2251-1857_M316.16 Authors: Mouhamadou A. Diop, Chen Xiaomeng and Mohamed I. Hassan Abstract: Molten metallic flow in metallurgical plant is highly turbulent and presents a complex coupling with heat transfer, phase change, chemical reaction, momentum transport, etc. Molten silicon flow condition has significant effect on its multicrystalline directional solidification, where flow

Gettering and Defect Engineering in Semiconductor

This technique is applied to p‐type upgraded metallurgical‐grade multicrystalline silicon wafers from the edge of the silicon cast. Silicon heterojunction solar cells are fabricated with these defect‐engineered wafers, achieving an impressive open circuit of 690 mV and efficiency of 18.7%.

Crystals

At present, we have not many investigations that deal with the role of temperature for protein crystallization [17,18,19,20,21], though we still find a few.Budayova-Spano et al., have developed new strategies and devices to grow big crystals for neutron diffraction [], and for protein crystallization using buttons of dialysis [23,24].

P. Nestler, N. Schlmer, O. Klein, J. Sprekels, F. Trltzsch, Optimal control of semiconductor melts by traveling magnetic fields, Vietnam Journal of Mathematics, 47 (2019), pp. 793--812, DOI 10.1007/s10013-019-00355-5.Abstract In this paper, the optimal control of traveling magnetic fields in a process of crystal growth from the melt of semiconductor materials is considered.

Curiculum Vitae Prof.dr. Daniel Vizman

directional solidification of silicon in a traveling magnetic field Journal of Crystal Growth, 367 (2013) 77-87 K. Dadzis, D. Vizman, J. Friedrich 28. Effects of crucible coating on the quality of multicrystalline silicon grown by a Bridgman technique Journal of Crystal

Numerical parameter studies of 3D melt flow and interface

The role of various growth and process conditions (Lorentz force, temperature gradients in the melt and the crystal, steady-state crystallization velocity) in directional solidification of multicrystalline silicon in a traveling magnetic field is analyzed for a research-scale furnace (melt size of 222211 cmSUP3/SUP). The influence on the melt flow pattern, the typical melt flow

Journal of Crystal Growth Open Access Articles

CiteScore: 3.3 ℹ CiteScore: 2020: 3.3 CiteScore measures the average citations received per peer-reviewed document published in this title. CiteScore values are based on citation counts in a range of four years (e.g. 2016-2019) to peer-reviewed documents (articles, reviews, conference papers, data papers and book chapters) published in the same four calendar years, divided by the number of

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